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A turn-key, high performance Hall System for the measurement of resistivity (ρ), carrier concentration (N), and mobility (x) in semiconductors. Modular in concept, allowing easy upgrade paths, the system is suitable for a wide variety of materials, including silicon, compound semiconductors and metal oxide films. The solution has both low and high resistivity measurement capabilities, with dual temperature capability and an optional cryostat extending the temperature range from below 90K to 500K
Features:
Features:
AC/DC measurement modes. The use of AC currents and phase sensitive detection eliminates thermal effects, long term drifts and significantly enhances signal- to-noise ratios. DC mode is useful when rate dependent trapping, rectification due to non-ohmic contacts 2 or stray capacitances may affect AC currents.
Simple probe system for convenient, fast sample throughput
Compact bench top design
Wide current range including auto- current facility in order to minimize sample heating
User defined electric field limitations to avoid impact ionization effects at low temps
Rare earth permanent magnet giving excellent stability
Light-tight sample enclosure avoiding measurement errors due to photo generated effects
Electro-forming circuitry for contact formation
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